ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,381, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices" was invented by Junbeom... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,382, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Pilkwang... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,383, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices" was invented by Jeewoon... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,384, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Integrated circuit device" was invented by Kyu... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,385, issued on Nov. 3, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Silicon carbide semiconductor substrate and semiconductor device" was ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,386, issued on Nov. 3, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "Method of manufacturing semiconductor structure and semic... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,387, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Semiconductor device with facet S/D f... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,388, issued on Nov. 3, was assigned to QUALCOMM Incorproated (San Diego). "Vertical channel field effect transistor (VCFET) with reduced con... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,389, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor devices having counter-... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,390, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor substrate, semiconductor device ... Read More